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1. general description the nx3v1t66 provides one single-pole single-t hrow analog switch function. it has two input/output terminals (y and z) and an active high enable input pin (e). when pin e is low, the analog switch is turned off. schmitt trigger action at the enable input (e) ma kes the circuit tolerant to slower input rise and fall times across the entire v cc range from 1.4 v to 4.3 v. a low input voltage threshold allows pin e to be driven by lower level logic signals without a significant increase in supply current i cc . this makes it possible for the nx3v1t66 to switch 4.3 v signals with a 1.8 v digital controller, eliminating the need for logic level translation. the nx3v1t66 allows signals with amplitude up to v cc to be transmitted from y to z or from z to y. its ultra-low on resistance (0.3 ) and flatness (0.1 ) ensures minimal attenuation and distortion of transmitted signals. 2. features ? wide supply voltage range from 1.4 v to 4.3 v ? very low on resistance (peak): ? 0.8 (typical) at v cc = 1.4 v ? 0.5 (typical) at v cc = 1.65 v ? 0.3 (typical) at v cc = 2.3 v ? 0.25 (typical) at v cc = 2.7 v ? 0.25 (typical) at v cc = 4.3 v ? high noise immunity ? esd protection: ? hbm jesd22-a114f class 3a exceeds 7500 v ? mm jesd22-a115-a exceeds 200 v ? cdm aec-q100-011 revision b exceeds 1000 v ? cmos low-power consumption ? latch-up performance exceeds 100 ma per jesd 78b class ii level a ? enable input accepts voltages above supply voltage ? 1.8 v control logic at v cc = 3.6 v ? high current handling capabilit y (500 ma continuous cu rrent under 3.3 v supply) ? specified from ? 40 c to +85 c and from ? 40 c to +125 c nx3v1t66 low-ohmic single-pole si ngle-throw analog switch rev. 05 ? 24 march 2010 product data sheet
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 2 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 3. applications ? cell phone ? pda ? portable media player 4. ordering information 5. marking [1] the pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. functional diagram table 1. ordering information type number package temperature range name description version NX3V1T66GW ? 40 c to +125 c tssop5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 nx3v1t66gm ? 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 table 2. marking codes [1] type number marking code NX3V1T66GW do nx3v1t66gm do fig 1. logic symbol fig 2. logic diagram 001aag48 7 e zy 001aah37 2 e yz
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 3 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 7. pinning information 7.1 pinning 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level. fig 3. pin configuration sot353-1 (tssop5) fig 4. pin configuration sot886 (xson6) nx3v1t66 yv cc z gnd e 001aai591 1 2 3 5 4 nx3v1t66 z 001aah555 y gnd n.c. v cc e transparent top view 2 3 1 5 4 6 table 3. pin description symbol pin description sot353-1 sot886 y 1 1 independent input or output z 2 2 independent output or input gnd 3 3 ground (0 v) e 4 4 enable input (active high) n.c. - 5 not connected v cc 5 6 supply voltage table 4. function table [1] input e switch l off-state h on-state
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 4 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 9. limiting values [1] the minimum input voltage rating may be exceeded if the input current rating is observed. [2] the minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 v. [3] for tssop5 package: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. for xson6 package: above 118 c the value of p tot derates linearly with 7.8 mw/k. 10. recommended operating conditions [1] to avoid sinking gnd current from of terminal z when switch cu rrent flows in terminal y, the voltage drop across the bidirec tional switch must not exceed 0.4 v. if the switch current flows into terminal z, no gnd current will flow from terminal y. in this case, there is no limit for the voltage drop across the switch. [2] applies to control signal levels. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage ? 0.5 +4.6 v v i input voltage enable input e [1] ? 0.5 +4.6 v v sw switch voltage [2] ? 0.5 v cc + 0.5 v i ik input clamping current v i < ? 0.5 v ? 50 - ma i sk switch clamping current v i < ? 0.5 v or v i > v cc + 0.5 v - 50 ma i sw switch current v sw > ? 0.5 v or v sw < v cc + 0.5 v; source or sink current - 500 ma v sw > ? 0.5 v or v sw < v cc + 0.5 v; pulsed at 1 ms duration, < 10 % duty cycle; peak current - 750 ma t stg storage temperature ? 65 + 150 c p tot total power dissipation t amb = ? 40 c to +125 c [3] - 250 mw table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 1.4 4.3 v v i input voltage enable input e 0 4.3 v v sw switch voltage [1] 0 v cc v t amb ambient temperature ? 40 +125 c t/ v input transition rise and fall rate v cc = 1.4 v to 4.3 v [2] - 200 ns/v
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 5 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 11. static characteristics table 7. static characteristics at recommended operating conditions; volt ages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 c t amb = ? 40 c to +125 c unit min typ max min max (85 c) max (125 c) v ih high-level input voltage v cc = 1.4 v to 1.6 v 0.9 - - 0.9 - - v v cc = 1.65 v to 1.95 v 0.9 - - 0.9 - - v v cc = 2.3 v to 2.7 v 1.1 - - 1.1 - - v v cc = 2.7 v to 3.6 v 1.3 - - 1.3 - - v v cc = 3.6 v to 4.3 v 1.4 - - 1.4 - - v v il low-level input voltage v cc = 1.4 v to 1.6 v - - 0.3 - 0.3 0.3 v v cc = 1.65 v to 1.95 v - - 0.4 - 0.4 0.3 v v cc = 2.3 v to 2.7 v - - 0.4 - 0.4 0.4 v v cc = 2.7 v to 3.6 v - - 0.5 - 0.5 0.5 v v cc = 3.6 v to 4.3 v - - 0.6 - 0.6 0.6 v i i input leakage current enable input e; v i = gnd to 4.3 v; v cc = 1.4 v to 4.3 v i s(off) off-state leakage current y port; see figure 5 v cc = 1.4 v to 3.6 v - - 5 - 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i s(on) on-state leakage current z port; see figure 6 v cc = 1.4 v to 3.6 v - - 5 - 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i cc supply current v i = v cc or gnd; v cc = 3.6 v; v sw = gnd or v cc ; i o = 0 a v cc = 3.6 v - - 100 - 690 6000 na v cc = 4.3 v - - 150 - 800 7000 na i cc additional supply current v sw = gnd or v cc v i = 2.6 v; v cc = 4.3 v - 2.0 4.0 - 7 7 a v i = 2.6 v; v cc = 3.6 v - 0.35 0.7 - 1 1 a v i = 1.8 v; v cc = 4.3 v - 7.0 10.0 - 15 15 a v i = 1.8 v; v cc = 3.6 v - 2.5 4.0 - 5 5 a v i = 1.8 v; v cc = 2.5 v - 50 200 - 300 500 na c i input capacitance - 1.0 - - - - pf c s(off) off-state capacitance - 70 - - - - pf c s(on) on-state capacitance - 205 - - - - pf
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 6 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 11.1 test circuits 11.2 on resistance [1] typical values are measured at t amb = 25 c. [2] flatness is defined as the difference between the maximum and minimum value of on resistance measured at identical v cc and temperature. v i = 0.3 v or v cc ? 0.3 v; v o = v cc ? 0.3 v or 0.3 v. v i = 0.3 v or v cc ? 0.3 v; v o = open circuit. fig 5. test circuit for measuring off-state leakage current fig 6. test circuit for measuring on-state leakage current 001aag48 8 i s v i v il v o v cc gnd y z e 001aag48 9 i s v i v ih v o v cc gnd y z e table 8. resistance r on at recommended operating conditions; volt ages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 14 . symbol parameter conditions t amb = ? 40 c to +85 c t amb = ? 40 c to +125 c unit min typ [1] max min max r on(peak) on resistance (peak) v i = gnd to v cc ; i sw = 100 ma; see figure 7 v cc = 1.4 v - 0.8 1.9 - 2.1 v cc = 1.65 v - 0.5 0.8 - 0.9 v cc = 2.3 v - 0.3 0.5 - 0.6 v cc = 2.7 v - 0.25 0.45 - 0.5 v cc = 4.3 v - 0.25 0.45 - 0.5 r on(flat) on resistance (flatness) v i = gnd to v cc ; i sw = 100 ma [2] v cc = 1.4 v - 0.5 1.7 - 1.8 v cc = 1.65 v - 0.25 0.6 - 0.7 v cc = 2.3 v - 0.1 0.2 - 0.2 v cc = 2.7 v - 0.1 0.2 - 0.2 v cc = 4.3 v - 0.1 0.25 - 0.25
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 7 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 11.3 on resistance t est circuit and graphs r on = v sw / i sw . (1) v cc = 1.5 v. (2) v cc = 1.8 v. (3) v cc = 2.5 v. (4) v cc = 2.7 v. (5) v cc = 3.3 v. (6) v cc = 4.3 v. measured at t amb = 25 c. fig 7. test circuit for measuring on resistance fig 8. typical on resistance as a function of input voltage 001aah37 5 v i v ih v cc gnd y z e v sw i sw v i (v) 05 4 3 12 001aah800 0.4 0.2 0.6 0.8 r on ( ) 0 (6) (5) (4) (3) (2) (1)
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 8 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. fig 9. on resistance as a function of input voltage; v cc = 1.5 v fig 10. on resistance as a function of input voltage; v cc = 1.8 v v i (v) 03 12 001aah805 0.4 0.2 0.6 0.8 r on ( ) 0 (1) (3) (2) (4) v i (v) 03 12 001aah801 0.2 0.4 0.6 r on ( ) 0 (1) (3) (2) (4) (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. fig 11. on resistance as a function of input voltage; v cc = 2.5 v fig 12. on resistance as a function of input voltage; v cc = 2.7 v v i (v) 03 12 001aah802 0.2 0.4 0.6 r on ( ) 0 (1) (3) (2) (4) v i (v) 03 12 001aah803 0.2 0.4 0.6 r on ( ) 0 (1) (3) (2) (4)
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 9 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 12. dynamic characteristics [1] typical values are measured at t amb = 25 c and v cc = 1.5 v, 1.8 v, 2.5 v, 3.3 v and 4.3 v respectively. (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. (1) t amb = 125 c. (2) t amb = 85 c. (3) t amb = 25 c. (4) t amb = ? 40 c. fig 13. on resistance as a function of input voltage; v cc = 3.3 v fig 14. on resistance as a function of input voltage; v cc = 4.3 v v i (v) 04 3 12 001aah804 0.2 0.4 0.6 r on ( ) 0 (1) (3) (2) (4) v i (v) 05 4 23 1 001aaj895 0.2 0.4 0.6 r on ( ) 0 (1) (2) (3) (4) table 9. dynamic characteristics at recommended operating conditions; vo ltages are referenced to gnd (ground = 0 v); for test circuit figure 16 . symbol parameter conditions 25 c ? 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) t en enable time e to y; see figure 15 v cc = 1.4 v to 1.6 v - 35 49 - 53 57 ns v cc = 1.65 v to 1.95 v - 28 40 - 43 48 ns v cc = 2.3 v to 2.7 v - 20 30 - 32 35 ns v cc = 2.7 v to 3.6 v - 18 28 - 30 32 ns v cc = 3.6 v to 4.3 v - 18 28 - 30 32 ns t dis disable time e to y; see figure 15 v cc = 1.4 v to 1.6 v - 32 70 - 80 90 ns v cc = 1.65 v to 1.95 v - 23 55 - 60 65 ns v cc = 2.3 v to 2.7 v - 14 25 - 30 35 ns v cc = 2.7 v to 3.6 v - 11 20 - 25 30 ns v cc = 3.6 v to 4.3 v - 11 20 - 25 30 ns
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 10 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 12.1 waveform and test circuits measurement points are given in table 10 . logic level: v oh is the typical output voltage that occurs with the output load. fig 15. enable and disable times 001aah87 5 y output off to high high to off e input v i v oh gnd gnd v m t en t dis v x v x switch enabled switch disabled switch disabled table 10. measurement points supply voltage input output v cc v m v x 1.4 v to 4.3 v 0.5v cc 0.9v oh test data is given in table 11 . definitions test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 16. load circuit for switching times 001aah37 7 e y/z z/y r l c l v cc v ext = 1.5 v v i v v o g table 11. test data supply voltage input load v cc v i t r , t f c l r l 1.4 v to 4.3 v v cc 2.5 ns 35 pf 50
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 11 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 12.2 additional dynami c characteristics [1] f i is biased at 0.5v cc . 12.3 test circuits table 12. additional dynamic characteristics at recommended operating conditions; vo ltages are referenced to gnd (ground = 0 v); v i = gnd or v cc (unless otherwise specified); t r = t f 2.5 ns; t amb = 25 c. symbol parameter conditions min typ max unit thd total harmonic distortion f i = 20 hz to 20 khz; r l = 32 ; see figure 17 [1] v cc = 1.4 v; v i = 1 v (p-p) - 0.05 - % v cc = 1.65 v; v i = 1.2 v (p-p) - 0.03 - % v cc = 2.3 v; v i = 1.5 v (p-p) - 0.01 - % v cc = 2.7 v; v i = 2 v (p-p) - 0.01 - % v cc = 4.3 v; v i = 2 v (p-p) - 0.01 - % f ( ? 3db) ? 3 db frequency response r l = 50 ; see figure 18 [1] v cc = 1.4 v to 4.3 v - 25 - mhz iso isolation (off-state) f i = 100 khz; r l = 50 ; see figure 19 [1] v cc = 1.4 v to 4.3 v - ? 90 - db v ct crosstalk voltage between digital inputs and switch; f i = 1 mhz; c l = 50 pf; r l = 50 ; see figure 20 v cc = 1.4 v to 3.6 v - 0.3 - v v cc = 3.6 v to 4.3 v - 0.5 - v q inj charge injection f i = 1 mhz; c l = 0.1 nf; r l = 1 m ; v gen = 0 v; r gen = 0 ; see figure 21 v cc = 1.5 v - 6.5 - pc v cc = 1.8 v - 6.5 - pc v cc = 2.5 v - 6.5 - pc v cc = 3.3 v - 6.5 - pc v cc = 4.3 v - 12 - pc fig 17. test circuit for measuri ng total harmonic distortion 001aah37 8 v ih v cc 0.5v cc z/y y/z e f i r l d
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 12 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch adjust f i voltage to obtain 0 dbm level at output. increase f i frequency until db meter reads ? 3 db. fig 18. test circuit for measuring the frequency response when channel is in on-state 001aah37 9 v ih v cc 0.5v cc z/y y/z e f i r l db adjust f i voltage to obtain 0 dbm level at input. fig 19. test circuit for measuring isolation (off-state) 001aah38 0 v il v cc 0.5v cc z/y y/z e f i r l 0.5v cc r l db
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 13 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch a. test circuit b. input and output pulse definitions fig 20. test circuit for measuring crosstalk voltage between digital inputs and switch 001aah38 3 e y/z z/y r l c l v cc v i v v o g 0.5v cc r l 0.5v cc v ct 001aah38 1 off logic input (e) v o on off
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 14 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch a. test circuit b. input and output pulse definitions definition: q inj = v o c l . v o = output voltage variation. r gen = generator resistance. v gen = generator voltage. fig 21. test circuit for measuring charge injection 001aah38 5 e y/z z/y gnd r l c l v cc v gen r gen v i v v o g 001aah38 4 v o off on off logic input (e) v o
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 15 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 13. package outline fig 22. package outline sot353-1 (tssop5) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) references outline version european projection issue date iec jedec jeita mm 0.1 0 1.0 0.8 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 e 1 1.3 2.25 2.0 0.60 0.15 7 0 0.1 0.1 0.3 0.425 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.46 0.21 sot353-1 mo-203 sc-88a 00-09-01 03-02-19 w m b p d z e e 1 0.15 13 5 4 a a 2 a 1 l p (a 3 ) detail x l h e e c v m a x a y 1.5 3 mm 0 scale t ssop5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353- 1 1.1
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 16 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch fig 23. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot88 6 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.5 0.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 17 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 14. abbreviations 15. revision history table 13. abbreviations acronym description cdm charged device model cmos complementary metal oxide semiconductor esd electrostatic discharge hbm human body model mm machine model pda personal digital assistant table 14. revision history document id release date data sheet status change notice supersedes nx3v1t66_5 20100324 product data sheet - nx3v1t66_4 nx3v1t66_4 20100202 product data sheet - nx3v1t66_3 modifications: ? ta b l e 8 : on resistance (flatness) changed at v cc = 4.3 v. nx3v1t66_3 20090504 product data sheet - nx3v1t66_2 nx3v1t66_2 20080724 product data sheet - nx3v1t66_1 nx3v1t66_1 20080327 product data sheet - -
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 18 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 16.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 16.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qua lified for use in automotive applications. the product is not desi gned, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be ex pected to result in personal injury, death or severe property or environmental dam age. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 16.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objec tive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
nx3v1t66_5 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 05 ? 24 march 2010 19 of 20 nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch 17. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors nx3v1t66 low-ohmic single-pole si ngle-throw analog switch ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 24 march 2010 document identifier: nx3v1t66_5 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 functional description . . . . . . . . . . . . . . . . . . . 3 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 recommended operating conditions. . . . . . . . 4 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 11.1 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11.2 on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11.3 on resistance test circuit and graphs. . . . . . . . 7 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 9 12.1 waveform and test circuits . . . . . . . . . . . . . . . 10 12.2 additional dynamic characteristics . . . . . . . . . 11 12.3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 16.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 16.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 17 contact information. . . . . . . . . . . . . . . . . . . . . 19 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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